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DDTCxxxxLP (R1R2 Series)
PRE-BIASED SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR
Features
* * * * * Epitaxial Planar Die Construction Ultra-Small Leadless Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2)
2 3 1
3
2
E B
C
R1
R2
1
Mechanical Data
* * * * * * * * Case: DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: Collector Dot (See Diagram) Terminals: Finish NiPdAu annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 6 Ordering Information: See Page 6 Weight: 0.001 grams (approximate) Component P/N DDTC123JLP DDTC143ZLP DDTC114YLP R1(NOM) 2.2K 4.7K 10K R2(NOM) 47K 47K 47K
C 3
Fig. 1
OUT
IN
1
B
IN
E
B 1 2 E
C 3
OUT
R1 R2
GND
2
GND
Equivalent Inverter Circuit
Schematic and Pin Configuration Fig. 2 Figure 2 2 2
Maximum Ratings
Characteristic Supply Voltage Input Voltage
@TA = 25C unless otherwise specified P/N DDTC123JLP DDTC143ZLP DDTC114YLP DDTC123JLP DDTC143ZLP DDTC114YLP Symbol VCC VIN Value 50 -5 to +12 -5 to +30 -5 to +40 100 100 70 250 2 100 Unit V V
Output Voltage Power Dissipation (Note 3) Power Deration above 25 C Maximum Collector Current
IO PD Pder IC(max)
mA mW mW/C mA
Thermal Characteristics
Characteristic Junction Operating and Storage Temperature Range Thermal Resistance, Junction to Ambient Air (Note 3) (Equivalent to one heated junction of NPN)
Notes: 1. 2. 3.
Symbol Tj, TSTG RJA
Value -55 to +150 400
Unit C C/W
No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB, 1 inchx0.85inchx0.062inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on page 6 or our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30755 Rev. 4 - 2
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DDTCxxxxLP (R1R2 Series)
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Electrical Characteristics
Characteristic Off Characteristics (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage * Collector Cutoff Current * Base Cutoff Current (IBEX) Collector-Base Cut Off Current Collector-Emitter Cut Off Current, IO(OFF) Emitter-Base Cut Off Current Input-Off Voltage On Characteristics (Note 4) Base-Emitter Turn-On Voltage*
@TA = 25C unless otherwise specified P/N Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL ICBO ICEO IEBO VI(OFF) DDTC123JLP DDTC143ZLP DDTC114YLP DDTC123JLP DDTC143ZLP DDTC114YLP DDTC123JLP DDTC143ZLP DDTC114YLP Min 50 50 4.5 1.1 50 70 125 150 180 -30 -20 Typ 250 Max 0.5 0.5 0.5 0.5 0.5 0.5 0.85 0.85 0.95 0.98 0.998 0.98 7.2 1.5 7.2 0.15 0.2 0.3 30 -20 Unit V V V A A A A mA V Test Condition IC = 10A, IE = 0 IC = 2mA, IB = 0
B
IE = 50A, IC = 0 VCE = 50V, VEB(OFF) = 3.0V VCE = 50V, VEB(OFF) = 3.0V VCB = 50V, IE = 0 VCE = 50V, IB = 0
B
VEB = 5V, IC = 0 VCE = 5V, IC = 100A
VBE(ON)
V
VCE = 5V, IC = 2mA
Base-Emitter Saturation Voltage* Input-On Voltage Input Current
VBE(SAT) VI(ON) II
V V mA V V % % MHz
IC = 10mA, IB = 1mA, VCE=5V
B
VO = 0.3V, IC = 5mA VI = 5V VCE = 5V, IC = 1mA VCE = 5V, IC = 2mA VCE = 5V, IC = 5mA VCE = 5V, IC = 10mA VCE = 5V, IC = 50mA IC = 10mA, IB = 1mA
B
DC Current Gain
hFE
Collector-Emitter Saturation Voltage Output On Voltage (Same as VCE(SAT)) Input Resistor +/-30% Resistor Ratio Small Signal Characteristics Transition Frequency (gain bandwidth product)
Notes:
VCE(SAT) VO(ON) R1 (R2/R1) Ft
IC = 50mA, IB = 5mA
B
IJ = 2.5mA, IO = 50mA VCE = 10V, IE = 5mA, f = 100MHz
*Guaranteed by design 4. Short duration pulse test used to minimize self-heating effect. Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02
Typical Characteristics Curves
PD, POWER DISSIPATION (mW)
@TA = 25C unless otherwise specified
RJA=400C/W
TA, AMBIENT TEMPERATURE (C) Fig. 3 Power Derating Curve
DS30755 Rev. 4 - 2
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Characteristics Curves of DDTC123JLP
@TA = 25C unless otherwise specified
2 1.8
IC, COLLECTOR CURRENT (A)
VI(ON), INPUT VOLTAGE (V)
1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -60 -30 0 30 60 90
V O=0.3V IO=5mA
120
150
TA, AMBIENT TEMPERATURE (C) Fig. 5 Input Voltage vs. TA
30
VBE(SAT), BASE EMITTER VOLTAGE (V)
27 24 21 18 15 12 9 6 3 0 0.1 1 10
IC / IB=10
VBE, BASE EMITTER VOLTAGE (V)
100
IC, COLLECTOR CURRENT (mA) Fig. 6 VBE vs IC
IC, COLLECTOR CURRENT (mA) Fig. 7 VBE(SAT) vs. IC
350 300
hFE, DC CURRENT GAIN
VCE =5V
250 200 150 100 50 0 0.1 1 10 100 1000
IC, COLLECTOR CURRENT (mA) Fig. 8 DC Current Gain
VCE(SAT), COLLECTOR VOLTAGE (V)
IC, COLLECTOR CURRENT (mA) Fig. 9 VCE(SAT) vs. IC
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Characteristics Curves of DDTC143ZLP
0.05
@TA = 25C unless otherwise specified
15
IC, COLLECTOR CURRENT (A)
VI(ON), INPUT VOLTAGE (V)
0.04
12
0.03
9
0.02
6
0.01
3
0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
0 0.1 1 10 100
IC, OUTPUT CURRENT (mA) Fig. 11 Input Voltage vs. Output Current
IC, COLLECTOR CURRENT (mA) Fig. 12 VBE vs. IC
VBE(SAT), BASE EMITTER VOLTAGE (V)
VBE, BASE EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (mA) Fig. 13 VBE(SAT) vs. IC
350 300
hFE, DC CURRENT GAIN
100
VCE(SAT), COLLECTOR VOLTAGE (V)
VCE =5V
IC / IB =10 10
250 200 150 100 50 0 0.1 1 10 100 1000
IC, COLLECTOR CURRENT (mA) Fig. 14 DC Current Gain
1
0.1
0.01 0.1 1 10 100 1000
IC, COLLECTOR CURRENT (mA) Fig. 15 VCE(SAT) vs. IC
DS30755 Rev. 4 - 2
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Characteristics Curves of DDTC114YLP
0.1 0.09
IC , COLLECTOR CURRENT (A)
@TA = 25C unless otherwise specified
1.5 V O=0.3V IO=5mA
0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0 1 2 3 4 5 6 7 8 9 10
VI(ON), INPUT VOLTAGE (V)
0.08
1.2
0.9
0.6
0.3
0 -60
-30
0
30
60
90
120
150
TA, AMBIENT TEMPERATURE (C) Fig. 17 Input Voltage vs. TA
VBE(SAT), BASE EMITTER VOLTAGE (V)
VBE, BASE EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (mA) Fig. 18 VBE vs. IC
IC, COLLECTOR CURRENT (mA) Fig. 19 VBE(SAT) vs. IC
350 300
hFE, DC CURRENT GAIN
10
VCE(SAT), COLLECTOR VOLTAGE (V)
V CE=5V
IC / IB=10
250 200 150 100 50 0 0.1 1 10 100 1000
IC, COLLECTOR CURRENT (mA) Fig. 20 DC Current Gain
1
0.1
0.01 0.1 1 10 100
IC, COLLECTOR CURRENT (mA) Fig. 21 VCE(SAT) vs. IC
DS30755 Rev. 4 - 2
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DDTCxxxxLP (R1R2 Series)
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Ordering Information
(Note 5)
Notes:
Marking Code Packaging Shipping Device N0 DFN1006-3 3000/Tape & Reel DDTC123JLP-7-F N1 DFN1006-3 3000/Tape & Reel DDTC143ZLP-7-F N2 DFN1006-3 3000/Tape & Reel DDTC114YLP-7-F 5. For Packaging Details, please see below or go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Nx = Product Type Marking Code, see ordering information above YM = Date Code Marking Y = Year e.g. U = 2007 M = Month e.g. 9 = September
Nx
Fig. 22 Date Code Key Year Code Month Code Jan 1 2007 U Feb 2 Mar 3 2008 V Apr 4 May 5
2009 W Jun 6 Jul 7
2010 X Aug 8 Sep 9
2011 Y Oct O Nov N
2012 Z Dec D
Mechanical Details
DFN1006-3
G
Dim
H
Min 0.95 0.55 0.45 0.20 0.47 0 0.10 0.20
Max 1.075 0.675 0.55 0.30 0.53 0.05 0.20 0.30
Typ
A B
A K
1.00 0.60 0.50 0.25 0.50 0.03 0.15 0.25 0.35 0.40
C D G
M
BC
H K L M N
D
N
L
Fig. 23
All Dimensions in mm
Suggested Pad Layout: (Based on IPC-SM-782)
C
DFN1006-3 Z G1 G2 X X1 Y C 1.1 0.3 0.2 0.7 0.25 0.4 0.7
X1 X G2
All Dimensions in mm
Y Z
G1
Fig. 24
DS30755 Rev. 4 - 2
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DDTCxxxxLP (R1R2 Series)
(c) Diodes Incorporated
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DS30755 Rev. 4 - 2
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(c) Diodes Incorporated

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